2SC4807
2SC4807 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High gain bandwidth product f T = 4.4 GHz Typ
- High output power 1 d B Power pression point Pcp = 24 d Bm Typ at VCE = 5V , I C = 100 m A , f = 900 MHz
Outline
UPAK
1 3 2
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC
- Tj Tstg
Ratings 20 15 2 200 800 150
- 55 to +150
Unit V V V m A m W °C °C
1. Value on the alumina ceramics board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “ER”. I EBO h FE Cob f T PG NF Min 20
- -
- 50
- 3.0 5.0
- Typ 30
- -
- 120 2.8 4.4 7.0 2.5 Max
- 1 1 10 250 4.0
- - 4.0 p F GHz d B d B Unit V µA m A µA Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, RBE = ∞ VEB = 2 V, IC = 0 VCE = 5 V, IC = 100 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 100 m A VCE = 5 V, IC = 100 m A, f = 900 MHz VCE = 5 V, IC = 20 m A, f = 900 MHz
Maximum Collector Dissipation Curve Collector Power Dissipation Pc (m W) (on the alumina ceramic board) 1600 200 DC Current Transfer Ratio h FE VCE = 5V DC Current Transfer Ratio vs. Collector Current
0 1 2 5 10 20 50 100 200 500 Collector Current I C (m...
