2SC4927
2SC4927 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High breakdown voltage VCES = 1500 V
- Built-in damper diode type
- Isolated package TO-3PFM
Outline
TO-3PFM
1. Base 2. Collector 3. Emitter
1 ID
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCES VEBO IC IC(peak) IC(surge) PC- Tj Tstg ID
Ratings 1500 6 8 9 18 50 150
- 55 to +150 8
Unit V V A A A W °C °C A
Electrical Characteristics (Ta = 25°C)
Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Fall time Symbol V(BR)EBO ICES h FE VCE(sat) VBE(sat) VECF tf Min 6
- -
- -
- - Typ
- -
- -
- -
- Max
- 500 25 5 1.5 2.0 0.5 Unit V µA
- V V V µs Test conditions IE = 500 m A, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 6 A, IB = 1.2 A IC = 6 A, IB = 1.2 A IF = 8 A ICP = 6 A, IB1 = 1.2 A, IB2 ≅
- 2.4 A, f H = 31.5 k Hz
Maximum Collector Power Dissipation Curve 80 Pc (W) 60 Collector Power Dissipation 40 20 0
150 Tc (°C)
Case Temperature
Area of Safe Operation 20 (100 V, 18 A) I C (A) 16 f = 15.75 k Hz Ta = 25 °C
For picture tube arcing
Collector Current
8 (800 V, 4 A) 0.5 m A 0 800 1200 1600 2000 400 Collector to Emitter Voltage V CE (V)
Typical Output Characteristics...
