2SC5022
2SC5022 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High breakdown voltage V (BR)CEO = 1500 V Min
Outline
TO-220FM
12 3
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 1500 1500 6 20 40 2 150
- 55 to +150 Unit V V V m A m A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Symbol I CES I CEO I EBO h FE VCE (sat) Min
- -
- 10
- Typ
- -
- -
- Max 10 100 10
- 5.0 V Unit µA µA µA Test conditions VCE = 1500 V, RBE = 0 VCE = 1500 V, RBE = ∞ VEB = 6 V, IC = 0 VCE = 5 V, IC = 1 m A I C = 10 m A, IB = 2 m A
Collector Power Dissipation vs. Ambient Temperature 4 Collector Power Dissipation Pc (W) Maximum Safe Operation Area 100 I C (m A) 50 20 10 0.5 0.2 0.1 100 200 500 1000 2000 5000 Collector to Emitter Voltage VCE (V) ic(peak) I C max 1 shot pulse Ta = 25 °C ms =1 s Pw 10 m ion at er C) Op 25° DC c = (T
50 100 150 Ambient Temperature Ta (°C)
Collector Current
Typical Output Characteristics 1.8 m A 1.6 m A 20 I C (m A)
0 2. m A
1.4 m A A m 1.2 0 m A 1.
DC Current Transfer Ratio vs. Collector Current 100 h FE 50 25 °C 75 °C
Collector Current
A 0.8 m m A 0.6 A 0.4 m
DC Current Transfer Ratio
20 10 5 2 Pulse Test VCE = 5 V 20 Ta =
- 25 °C
0.2 m
Pulse Test Ta = 25 °C 0
IB =...
