2SC5080
2SC5080 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High gain bandwidth product f T = 13.5 GHz Typ
- High gain, low noise figure PG = 18 d B Typ, NF = 1.1 d B Typ at f = 900 MHz
Outline
MPAK-4
3 1 4
1. Collector 2. Emitter 3. Base 4. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 150 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “ZD- ”. I EBO h FE Cob f T PG NF Min 15
- -
- 50
- 10.5 15
- Typ
- -
- - 90 0.4 13.5 18 1.1 Max
- 1 1 10 160 0.75
- - 2.0 p F GHz d B d B Unit V µA m A µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 m A VCE = 5 V, IC = 20 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz
Attention: This device is very sensitive to electro static discharge. It is remended to adopt appropriate cautions when handling this transistor.
Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 200 DC Current Transfer Ratio h FE VCE = 5V DC Current Transfer Ratio vs. Collector Current
40 0 0.1
50 100 Ambient Temperature Ta (°C)
1 10 Collector Current I C (m A)
Gain Bandwidth Product vs. Collector Current 20 Gain Bandwidth Product f T (GHz) Collector Output Capacitance Cob (p F) 5
Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 2 1 0.5
16 VCE = 5V 12 VCE = 1V
4 0 1 2 5 10 20 Collector Current I C (m A) 50
0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 Collector to Base Voltage V CB...
