2SC5137
2SC5137 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High gain bandwidth product f T = 10 GHz typ
- High gain, low noise figure PG = 16.5 d B typ, NF = 1.5 d B typ at f = 900 MHz
Outline
SMPAK
3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “YA- ”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 20 80 150
- 55 to +150 Unit V V V m A m W °C °C
Attention: This device is very sensitive to electro static discharge. It is remended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO h FE Cob f T PG NF Min
- -
- 50
- 7 12
- Typ
- -
- 120 0.45 10 16.5 1.5 Max 10 1 10 250 0.8
- - 2.5 p F GHz d B d B Unit µA m A µA Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 10 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 10 m A VCE = 5 V, IC = 10 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz
Maximum Collector Dissipation Curve Collector Power Dissipation Pc (m W) 160 DC Current Transfer Ratio h FE 200 V CE = 5 V Pulse Test DC Current Transfer Ratio vs. Collector Current
40 0 0.1
50 100 150 Ambient Temperature Ta (°C)
1 10 Collector Current I C (m A)
20 Gain Bandwidth Product f T (GHz)
Collector Output Capacitance Cob (p F)
Gain Bandwidth Product vs. Collector Current
Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1...
