2SC5138
2SC5138 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High gain bandwidth product f T = 6 GHz typ
- High gain, low noise figure PG = 13 d B typ, NF = 1.8 d B typ at f = 900 MHz
Outline
SMPAK
3 1 2
1. Emitter 2. Base 3. Collector
Note:
Marking is “YL- ”.
Attention: This device is very sensitive to electro static discharge. It is remended to adopt appropriate cautions when handling this transistor.
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 12 2 30 80 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO h FE Cob f T PG NF Min
- -
- 50
- 4 9.5
- Typ
- -
- 120 0.65 6 13 1.8 Max 10 1 10 250 1.05
- - 3.0 p F GHz d B d B Unit µA m A µA Test conditions VCB = 20 V, IE = 0 VCE = 12 V, RBE = ∞ VEB = 2 V, IC = 0 VCE = 5 V, IC = 10 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 10 m A VCE = 5 V, IC = 10 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz
Maximum Collector Dissipation Curve Collector Power Dissipation Pc (m W) 160 200 DC Current Transfer Ratio h FE V CE = 5 V Pulse Test DC Current Transfer Ratio vs. Collector Current
40 0 0.01
50 100 150 Ambient Temperature Ta (°C)
0.1 1 10 Collector Current I C (m A)
10 Gain Bandwidth Product f T (GHz)
Collector Output Capacitance Cob (p F)
Gain Bandwidth Product vs. Collector Current VCE = 5V
1.0 0.8
Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1...
