2SC5139
2SC5139 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High gain bandwidth product f T = 11 GHz typ
- High gain, low noise figure PG = 15 d B typ, NF = 1.1 d B typ at f = 900 MHz
Outline
SMPAK
3 1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “YZ- ”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 80 150
- 55 to +150 Unit V V V m A m W °C °C
Attention: This device is very sensitive to electro static discharge. It is remended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown boltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO h FE Cob f T PG NF Min 15
- -
- 50
- 8 11.5
- Typ
- -
- - 120 0.65 11 15 1.1 Max
- 1 1 10 250 1.15
- - 2.0 p F GHz d B d B Unit V µA m A µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 4 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 4 V, IC = 20 m A VCE = 4 V, IC = 20 m A, f = 900 MHz VCE = 4 V, IC = 5 m A, f = 900 MHz
Maximum Collector Dissipation Curve Collector Power Dissipation Pc (m W) 160 200 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs. Collector Current
40 0 0.01 VCE = 4 V Pulse Test 0.1 1 10 Collector Current I C (m A) 100
50 100 150 Ambient Temperature Ta (°C)
20 Gain Bandwidth Product f T (GHz)
VCE = 4V 16
Collector Output Capacitance Cob (p F)
Gain Bandwidth Product vs. Collector Current
Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1...
