2SC5225
2SC5225 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High voltage large current operation. VCEO = 80 V, IC = 300 m A
- High f T . f T = 1.4 GHz
- Small output capacitance. Cob = 3 p F
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 100 80 3 300 625 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector to base cutoff current Emitter to base cutoff current DC current transfer ratio Gain bandwidth product Emitter input capacitance Collector output capacitance Symbol V(BR)CBO V(BR)CEO I CBO I EBO h FE f T Cib Cob Min 100 80
- - 20 1.2
- - Typ
- -
- - 70 1.4 13 3 Max
- - 1 10
- - 19 4 GHz p F p F Unit V V µA µA Test conditions I C = 100 µA, IE = 0 I C = 1 m A, RBE = ∞ VCB = 80 V, IE = 0 VEB = 3 V, IC = 0 VCE = 5 V, IC = 50 m A Pulse test VCE = 10 V, IC = 50 m A VEB = 0, IC = 0, f = 1 MHz VCB = 10 V, IE = 0, f = 1 MHz
Collector Power Dissipation Curve Collector Power Dissipation Pc (m W) 1000 DS Current Transfer Ratio h FE
DC Current Transfer Ratio vs. Collector Current 100 VCE = 5V
10 1
10 20
50 100 200 500
Ambient Temperature Ta (°C)
Collector Current I C (m A)
Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage V CE(sat) (m V) 500 I C / I B = 10 Collector Current I C (m A) Collector Current vs. Base to Emitter Voltage VCE = 5V
500 200 100 50 20 10 5 2 1 0.5...
