2SC5251
2SC5251 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Features
- High breakdown voltage VCBO = 1500 V
- High speed switching tf = 0.2 µsec (typ)
- Isolated package TO-3P- FM (N)
Outline
TO-3PFM (N)
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC- Tj Tstg
Ratings 1500 800 6 12 24 50 150
- 55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 800 6
- 8 5
- -
- Typ
- -
- -
- -
- 0.2 Max
- - 500 35 9 5 1.5 0.4 V V µsec Unit V V µA Test conditions IC = 10 m A, RBE = ∞ IE = 10 m A, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5 A IC = 7 A, IB = 1.8 A IC = 7 A, IB = 1.8 A ICP = 6 A, IB1 = 1.5 A, f H = 31.5 k Hz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time V(BR)EBO ICES h FE1 h FE2 VCE(sat) VBE(sat) tf
Maximum Collector Power Dissipation Curve Pc (W) Collector Power Dissipation 80
50 100 Case Temperature
150 Tc (°C)
Area of Safe Operation 25 I C (A) (400 V, 24 A)
Collector Current
(600 V, 8 A) (800 V, 3 A) (1500 V, 0.5m A)
5 I B2 =
- 1 A L = 180 µH duty <1% 0
800 1200 1600 2000 400 Collector to Emitter Voltage V CE...
