2SC5252 Datasheet | Hitachi Semiconductor

Features - High breakdown voltage VCBO = 1500 V - High speed switching tf ≤ 0.15 µsec(typ.) - Isolated package TO- 3P- FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC- Tj Tstg Ratings 1500 800 6 15 30 50 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 800 6 - 8 3 - - - Typ - - - - - - - 0.15 Max - - 500 35 6 5 1.5 0.3 V V µsec Unit V V µA Test conditions IC = 10 m A, RBE = ∞ IE = 10 m A, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 8 A IC = 10 A, IB = 3 A IC = 10 A, IB = 3 A ICP = 7 A, IB1 = 2 A, f H = 31.5 k Hz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time V(BR)EBO ICES h FE1 h FE2 VCE(sat) VBE(sat) tf Collector Power Dissipation vs. Case Temperature Pc (W) Collector Power Dissipation 50 100 Case Temperature 150 Tc (°C) Areaof Safe Operaion 50 I B1 = - 1 A L = 180 µH duty < 1 % Tc = 25°C I C (A) 40 (400 V, 30 A) Collector Current 20 (600 V, 8 A) (800 V, 4 A) (1500 V, 0.5 m A) 0 400 800 1200 1600 2000 Collector to Emitter Voltage VCE...