2SC5273
2SC5273 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- High brakedown voltage V(BR)CEO = 1300 V min
Outline
TO-220AB
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C(peak) PC Tj Tstg Ratings 1300 1300 6 30 60 1.8 150
- 55 to +150 Unit V V V m A m A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol I CES I CEO I EBO h FE VCE(sat) f T Cob Min
- -
- 10
- -
- Typ
- -
- -
- 5.5 3.4 Max 10 100 10
- 5.0
- - V MHz p F Unit µA µA µA Test conditions VCE = 1300 V, RBE = 0 VCE = 1300 V, RBE = ∞ VEB = 6 V, IC = 0 VCE = 10 V, IC = 10 m A I C = 10 m A, IB = 2 m A VCE = 20 V, IC = 1 m A VCB = 100 V, IE = 0, f = 1 MHz
Maximum Collector Power Dissipation Curve 4 Collector Power Dissipation Pc (W) Area of Safe Operation 100 ic(peak) I C (m A) s 1m = s n Pw 10 m tio ra ) pe ° C O 25 DC c = (T
50 I C max 20 10 0.5 0.2
Collector Current
50 100 150 Ambient Temperature Ta (°C)
0.1 100 200 500 1000 2000 5000 Collector to Emitter Voltage VCE (V)
1 shot pulse Ta = 25 °C
Typical Output Characteristics 1.8 m A 1.6 m A 20 I C (m A)
0 2. m A m A 1.4 .2 m A 1 0 m A 1.
A 0.8 m m A 0.6 A 0.4 m
DC Current Transfer Ratio vs. Collector Current 100 h FE 50 25 °C 75 °C
DC Current Transfer Ratio
20 10 5 2 1 0.1 Pulse Test VCE = 5 V 0.3 1 3 10 Collector Current I C (m A) 30 Ta =
- 25 °C
Collector...
