2SC535 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 100 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 4 - 1 Typ - - - - - 0.72 0.17 940 0.9 20 3.5 Max - - - 0.5 200 - - - 1.2 - 5.5 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Power gain Noise figure Input admittance (typ) Reverse transfer admittance (typ) Foward transfer admittance (typ) Output admittance (typ) Note: B 60 to 120 C 100 to 200 V(BR)EBO I CBO h FE- VBE VCE(sat) f T Cob PG NF yie yre yfe yoe - - 450 - 17 - V V MHz p F d B d B m S m S m S m S VCE = 6 V, IC = 1 m A I C = 20 m A, IB =4 m A VCE = 6 V, IC = 5 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 m A, f = 100 MHz VCE = 6 V, IC = 1 m A, f = 100 MHz, Rg = 50 Ω VCE = 6 V, IC = 1 m A, f = 100 MHz 1.3 + j5.3 - 0.078 - j0.41 32 - j10 0.08 + j0.82 1. The 2SC535 is grouped by h FE as follows. Maximum Collector Dissipation Curve Collector power dissipation PC (m W) 150 Collector Current IC (m A) 20 16 12 8 300 275 250 225 200 175 150 125 100 Typical Output Characteristics 75...