2SC5390
2SC5390 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Features
- Excellent high frequency characteristics f T = 1.4GHz (typ.)
- Low output capacitance C ob = 2.4 p F (typ.)
- Isolated package TO- 126FM
Outline
TO- 126FM
12 3
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) PC PC
- Tj Tstg
Ratings 110 110 3 200 400 1.4 7 150
- 55 to +150
Unit V V V m A m A W W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Symbol V(BR)CBO V(BR)CEO I CBO I EBO h FE VBE Min 110 110
- - 30
- - 1.0
- Typ
- -
- -
- -
- 1.4 2.4 Max
- - 10 10 100 1 1
- 3.5 V V GHz p F Unit V V µA µA Test Conditions I C = 10É A, IE = 0 I C = 1m A, RBE = ∞ VCB = 100V, IE = 0 VE B = 3V, IC = 0 VCE = 10 V, IC = 10m A VCE = 10 V, IC = 10m A I C = 200m A, IB = 20m A VCE = 10 V, IC = 50m A VCB = 30V, IE = 0 f = 1MHz
Collector to emitter saturation VCE(sat) voltage Gain bandwidth product f T
Collector Output capacitance Cob
Main Characteristics
Collector Power Dissipation vs. Temperature Pc (W) 8
1000 I C (m A)
Areaof Safe Operaion PW = 1 ms 10 ms n tio era ) Op 5°C DC c = 2 (T ic(peak) 300 I max C 100 30 10 3 1 1 shot pulse Ta = 25 °C 1
Collector Power Dissipation
6 Tc 4
2 Ta
50 100 150 200 Ambient Temperature Ta (°C) Case Temperature Tc (°C)
Collector Current
3 10 30 100 300 1000 Collector to Emitter Voltage VCE (V)
Typical Output Characteristics 200 I C (m...
