2SC5480 Datasheet | Hitachi Semiconductor

Features - High breakdown voltage VCES = 1500 V - Isolated package TO- 3PFM - Built-in damper diode Outline TO- 3PFM C 2 1 B 3 E 2 3 1. Base 2. Collector 3. Emitter .. .. .. Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Collector to emitter diode forward current Note: 1. Value at Tc = 25° C Symbol VCES VEBO IC ic(peak) PC Tj Tstg ID Note1 Ratings 1500 5 14 28 50 150 - 55 to +150 14 Unit V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Symbol V(BR)EBO I CES h FE1 h FE2 Min 5 - 5 4 - - - - Typ - - - - - - - 0.2 Max - 500 25 7 5 1.5 2 0.4 V V V µs Unit V µA Test Conditions I E = 500m A, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 10A I C = 10A, IB = 2.5A I C = 10A, IB = 2.5A I F = 14A I CP = 7A, IB1= 2.4A f H = 31.5k Hz Collector to emitter saturation VCE(sat) voltage Base to emitter saturation voltage Collector to emitter diode forward voltage Fall time VBE(sat) VECF tf Main Characteristics Collector Power Dissipation vs. Temperature Pc (W) 80 I C (A) 50 20 10 5 2 1 0.5 0.2 0 50 100 Case Temperature 150 Tc (°C) 200 Area of Safe Operaion Collector Power Dissipation Collector...