2SC5631 Datasheet | Hitachi Semiconductor

Features - High gain bandwidth product f T = 11 GHz typ. - High power gain and low noise figure ; PG = 10 d B typ. , NF = 1.2 d B typ. at f = 900 MHz Outline UPAK .. 4 1. Base 2. Collector 3. Emitter 4. Collector Note: Marking is “JR”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 80 800- 150 - 55 to +150 Unit V V V m A m W °C °C - When using alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CBO I CEO I EBO h FE Cob f T PG NF Min 15 - - - 80 - 8 7 - Typ - - - - 120 1.6 11 10 1.2 Max - 1 1 10 160 2.2 - - 1.9 Unit V µA m A µA V p F GHz d B d B Test Conditions I C = 10 µA , IE = 0 VCB = 12 V , IE = 0 VCE = 6 V , RBE = ∞ VEB = 1.5 V , IC = 0 VCE = 5 V , IC = 50 m A VCB = 5 V , IE = 0 f = 1 MHz VCE = 5 V , IC = 50 m A f = 1 GHz VCE = 5 V , IC = 50 m A f = 900 MHz VCE = 5 V , IC = 5 m A f = 900 MHz Main Characteristics Collector Power Dissipation Curve Pc (m W) 1600 h FE 200 DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio Collector Power Dissipation VCE = 5 V 100 3V 0 0 50 100 150 Ta (°C) 200 1 2 5 10 20 IC 50 (m A) 100 Ambient Temperature Collector Current (p F) Cob IE = 0 f =...