2SC5700 Datasheet | Hitachi Semiconductor

Features - High power gain low noise figure at low power operation: |S21| = 16 d B typ, NF = 1.0 d B typ (VCE = 1 V, IC = 5 m A, f = 900 MHz) Outline MFPAK 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WB- “. Absolute Maximum Ratings (Ta = 25 °C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Value 15 4 1.5 50 80 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Forward transmission coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO h FE Cob f T |S21| NF Min 15    100  10 13  Typ     130 0.4 12 16 1.0 Max  0.1 1 200 170 0.7   1.7 Unit V µA µA n A  p F GHz d B d B Test conditions IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 4 V, RBE = Infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 m A VCB = 1 V, IE = 0, f = 1 MHz VCE = 1V, IC = 5 m A VCE = 1 V, IC = 5 m A, f = 900 MHz VCE = 1 V, IC = 5 m A, f = 900 MHz, ΓS = ΓL = 50 ohm Rev.0, Jun. 2001, page 2 of 10 Collector Power Dissipation Curve Typical Output Characteristics 50 0µ A 450 µA Pc (m W) 100 80 400 µA 350 µA 300 µA I C (m A) 40 30 Collector Power Dissipation 250 µA 200 µA 150...