2SC5757 Datasheet | Hitachi Semiconductor

Features - Super pact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WE- “. Absolute Maximum Ratings (Ta = 25 °C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 10 3.5 1.5 80 80 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO h FE Cob f T PG NF Min 10    80 0.9 4.5 8  Typ     100 1.2 6.5 11 1.1 Max  600 200 100 130 1.5   2.0 Unit V n A n A n A  p F GHz d B d B Test conditions IC = 10 µA, IE = 0 VCB = 10 V, IE = 0 VCE = 3.5 V, RBE = Infinite VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 m A VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 m A VCE = 1 V, IC = 5 m A, f = 900 MHz VCE = 1 V, IC = 5 m A, f = 900 MHz Rev.4, Jul. 2001, page 2 of 10 Collector Power Dissipation Curve 100 Pc (m W) IC (m A) Typical Output Characteristics 50 500 µA µA 450 400 µA 350 µA 80 60 µA µA Collector Power Dissipation Collector Current 200 µ 150 µA 100 µA IB = 50...