2SC5759 Datasheet | Hitachi Semiconductor

Features - High gain bandwidth product f T = 10.6 GHz typ. - High power gain and low noise figure ; PG = 11.5B typ. , NF = 1.1 d B typ. at f = 900 MHz - Very low distortion Output IP3 (800 MHz) = 36 d Bm typ. Outline CMPAK-4 2 3 1 4 1. Collector 2. Collector 3. Base 4. Emitter Note: Marking is “WN-”. This data sheet contains tentative specification for new product development. It may partially be subject to change without notice. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 80 200- 150 - 55 to +150 Unit V V V m A m W °C °C - When using aluminium ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure S21 parameter Output IP3 I CBO I CEO I EBO h FE Cob f T PG NF |S21|2 OIP3 - - - 80 - 8 7 - - - - - - 120 1.2 10.6 11.5 1.1 10.3 36 1 1 10 160 2.2 - - 1.9 - - µA m A µA V p F GHz d B d B d B d Bm VCB = 12 V, IE = 0 VCE = 6 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 50 m A VCB = 5 V, IE = 0 f = 1 MHz VCE = 5 V, IC = 50 m A f = 1 GHz VCE = 5 V, IC = 50 m A f = 900 MHz VCE = 5 V, IC = 5 m A f = 900 MHz VCE = 5 V, IC = 50 m A f = 1 GHz VCE = 5 V, IC = 50 m A f = 800 MHz Symbol V(BR)CBO Min 15 Typ - Max - Unit V Test Conditions I C = 10 µA, I E = 0 Main Characteristics Collector Power Dissipation Curve Pc- (m W) 400 h FE - when using aluminum ceramic board (12.5 x 20 x 0.7 mm) DC Current Transfet Ratio vs. Collector Current DC Current Transfer Ratio Collector Power Dissipation VCE = 5 V 100 3V 0 0 50 100 150 Ta (°C) 200 1 2 5 10 20 IC 50 (m A) 100 Ambient Temperature Collector...