2SC5773 Datasheet | Hitachi Semiconductor

Features - High gain bandwidth product f T = 10.8 GHz typ. - High power gain and low noise figure ; PG = 11.9 d B typ., NF = 1.1 d B typ. at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “JR-”. This data sheet contains tentative specification for new product development. It may partially be subject to change without notice. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 80 700- 150 - 55 to +150 Unit V V V m A m W °C °C - When using aluminium ceramic board (25 x 60 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Symbol V(BR)CBO I CBO I CEO I EBO h FE Cob Min 15 - - - 80 - - 8 - 9 - Typ - - - - 120 1.25 0.98 10.8 11 11.9 1.1 Max - 1 1 10 160 1.8 - - - - 1.9 Unit V µA m A µA V p F p F GHz d B d B d B Test Conditions I C = 10µ A, IE = 0 VCB = 12 V, IE = 0 VCE = 6 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 50 m A VCB = 5 V, IE = 0 f = 1 MHz VCB = 5 V, IE = 0 f = 1 MHz VCE = 5 V, IC = 50 m A f = 1 GHz VCE = 5 V, IC = 50 m A f = 1 GHz VCE = 5 V, IC = 50 m A f = 900 MHz VCE = 5 V, IC = 5 m A f = 900 MHz Reverse transfer capacitance Cre Gain bandwidth product S21 parameter Power gain Noise figure f T |S21|2 PG NF Collector Power Dissipation Curve Pc (m W) 1000 h FE When using aluminum ceramic board S = 25 mm X 60 mm, t = 0.7 mm DC Current Transfet Ratio vs. Collector Current 200 Collector Power Dissipation DC Current Transfer Ratio VCE = 5 V 100 3V 0 0 50 100 150 Ta (°C) 200 1 2 5 10 20 IC 50 (m A) 100 Collector Current Ambient Temperature (p F) Cob IE = 0 f = 1...