2SC5827 Datasheet | Hitachi Semiconductor

Features - Super pact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 1 2 1. Emitter 2. Base 3. Collector Note: Marking is “WW- ”. .. Absolute Maximum Ratings (Ta = 25 °C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 5.5 1.5 80 80 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25 °C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain .. Noise figure Symbol V(BR)CBO ICBO ICEO IEBO h FE Cob f T PG NF Min 15    100  1.5 10.5  Typ     120 0.85 4.5 13.5 1.1 Max  0.1 1 0.1 150 1.15   1.8 Unit V µA µA µA  p F GHz d B d B Test conditions IC = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 5.5 V, RBE = Infinite VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 m A VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 m A VCE = 1 V, IC = 5 m A, f = 900 MHz VCE = 1 V, IC = 5 m A, f = 900 MHz Rev.0, Nov. 2001, page 2 of 10 Collector Power Dissipation Curve Collector Power Dissipation PC (m W) Collector Current IC (m A) Typical Output Characteristics 160 µA 140 µA 120 µA 100 µA 80 60 16 12 80 µA 60 µA 40 µA IB = 20...