2SD1101 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application - Low frequency amplifier - plementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak) PC Tj Tstg Ratings 25 20 5 0.7 1 150 150 - 55 to +150 Unit V V V A A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 - 1 Typ - - - - - - - Max - - - 1.0 240 0.5 1.0 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 0.15 A- 2 I C = 0.5 A, IB = 0.05 A- 2 VCE = 1 V, IC = 0.15 A- 2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage V(BR)EBO I CBO h FE- - - VCE(sat) VBE Notes: 1. The 2SD1101 is grouped by h FE as follows. 2. Pulse test Grade Mark h FE B AB 85 to 170 C AC 120 to 240 See characteristic curves of 2SD467. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 100 150 50 Ambient Temperature Ta (°C) Unit: mm 0.10 3 - 0.4...