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2SD1101 - Silicon NPN Transistor

Key Features

  • +0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) Rating 25 20 5 0.7 1 150 150 -55 to +150 Unit V V V A A mW PC Tj Tstg Electrical Ch.

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Datasheet Details

Part number 2SD1101
Manufacturer Guangdong Kexin Industrial
File Size 53.23 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1101 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low Frequency amplifier. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) Rating 25 20 5 0.