2SD110 - Silicon NPN Power Transistor

Inchange Semiconductor Company

General Description

High Power Dissipation- : PC= 100W@TC= 25℃ High Current Capability- : IC = 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

converter and regulator applications.

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2SD110 silicon npn power transistor by Inchange Semiconductor Company - Datasheet Preview

Datasheet Details

Part number	2SD110
Manufacturer	Inchange Semiconductor Company
File Size	213.05 KB
Description	Silicon NPN Power Transistor
Datasheet	2SD110 Datasheet

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isc Silicon NPN Power Transistor DESCRIPTIONV ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A IE Emitter Current-Continuous 10 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD110 isc website：www.iscsemi.