Datasheet Details
| Part number | 2SD110 |
|---|---|
| Manufacturer | Inchange Semiconductor Company |
| File Size | 213.05 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD110_InchangeSemiconductorCompany.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD110 |
|---|---|
| Manufacturer | Inchange Semiconductor Company |
| File Size | 213.05 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD110_InchangeSemiconductorCompany.pdf |
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V ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A IE Emitter Current-Continuous 10 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD110 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD1101 | NPN TRANSISTOR | Hitachi Semiconductor |
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2SD1101 | Silicon NPN Transistor | Guangdong Kexin Industrial |
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2SD1101 | Silicon NPN Transistor | Renesas |
| Part Number | Description |
|---|---|
| 2SD1105 | Silicon NPN Power Transistor |
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| 2SD1603 | Silicon NPN Darlington Power Transistor |
| 2SD1770 | Silicon NPN Darlington Power Transistor |
| 2SD1832 | Silicon NPN Darlington Power Transistor |