Datasheet Details
| Part number | 2SD1184 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.91 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1184-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1184.
| Part number | 2SD1184 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 193.91 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1184-INCHANGE.pdf |
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 3 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC TC=25℃ TJ Junction Temperature 5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1184 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
RBE= ∞ MIN TYP.
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