| Part number | 2SD1185 |
|---|---|
| Datasheet | 2SD1185-INCHANGE.pdf |
| File Size | 198.51 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1185 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1180 | NPN Transistor |
| 2SD1183 | NPN Transistor |
| 2SD1184 | NPN Transistor |
| 2SD1186 | NPN Transistor |
| 2SD111 | Silicon NPN Power Transistor |
| 2SD1110 | NPN Transistor |
| 2SD1114 | NPN Transistor |
| 2SD1115 | NPN Transistor |
| 2SD1124 | NPN Transistor |
| 2SD1128 | NPN Transistor |
