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2SD1185 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1200V (Min) High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for power switching applications.

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Datasheet Details

Part number 2SD1185
Manufacturer INCHANGE
File Size 198.51 KB
Description NPN Transistor
Datasheet download datasheet 2SD1185 Datasheet
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Full PDF Text Transcription

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC TC=25℃ TJ Junction Temperature 7 A 50 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SD1185 isc website：www.iscsemi.
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