2SD1186 datasheet by Inchange Semiconductor.
| Part number | 2SD1186 |
|---|---|
| Datasheet | 2SD1186-INCHANGE.pdf |
| File Size | 198.78 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1186 | SILICON POWER TRANSISTOR | SavantIC |
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| 2SD111 | Silicon NPN Power Transistor |
| 2SD1110 | NPN Transistor |
| 2SD1114 | NPN Transistor |
| 2SD1115 | NPN Transistor |
| 2SD1124 | NPN Transistor |
| 2SD1128 | NPN Transistor |
