2SD1183 Overview
·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Reliability ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1183 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...