2SD1187 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1187 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.