| Part number | 2SD1187 |
|---|---|
| Datasheet | 2SD1187_InchangeSemiconductor.pdf |
| File Size | 199.00 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1187 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1187 | NPN TRANSISTOR | Toshiba Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1113 | Silicon NPN Power Transistor |
| 2SD1117 | Silicon NPN Power Transistor |
| 2SD1118 | Silicon NPN Power Transistor |
| 2SD1126 | Silicon NPN Darlington Power Transistor |
| 2SD1127 | Power Transistor |
| 2SD1141 | Power Transistor |
| 2SD1154 | Silicon NPN Power Transistor |
| 2SD1157 | Silicon NPN Power Transistor |
| 2SD1162 | Silicon NPN Darlington Power Transistor |
| 2SD1170 | Power Transistor |
