2SD1180 Description
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) ·Low collector saturation voltage ·With TO-126 package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio and radio frequency power amplifiers applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1180 TC=25℃ unless...