Datasheet4U Logo Datasheet4U.com

2SD1180 - NPN Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2SD1180

Datasheet Details

Part number 2SD1180
Manufacturer INCHANGE
File Size 179.38 KB
Description NPN Transistor
Datasheet download datasheet 2SD1180 Datasheet
Additional preview pages of the 2SD1180 datasheet.

Product details

Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) Low collector saturation voltage With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio and radio frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 6 V IC

📁 Similar Datasheet

  • 2SD1180 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1185 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1186 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1187 - NPN TRANSISTOR (Toshiba Semiconductor)
  • 2SD1187 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1189 - NPN Transistor (Rohm)
  • 2SD110 - Silicon NPN Power Transistor (Inchange Semiconductor Company)
  • 2SD1101 - NPN TRANSISTOR (Hitachi Semiconductor)
Other Datasheets by INCHANGE
Published: |