| Part number | 2SD1105 |
|---|---|
| Datasheet | 2SD1105_InchangeSemiconductorCompany.pdf |
| File Size | 207.33 KB |
| Manufacturer | Inchange Semiconductor Company |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power AF amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...
See all Inchange Semiconductor Company datasheets
| Part Number | Description |
|---|---|
| 2SD110 | Silicon NPN Power Transistor |
| 2SD1590 | Silicon NPN Darlington Power Transistor |
| 2SD1603 | Silicon NPN Darlington Power Transistor |
| 2SD1770 | Silicon NPN Darlington Power Transistor |
| 2SD1832 | Silicon NPN Darlington Power Transistor |
