Datasheet Details
| Part number | 2SD1105 |
|---|---|
| Manufacturer | Inchange Semiconductor Company |
| File Size | 207.33 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1105_InchangeSemiconductorCompany.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1105 |
|---|---|
| Manufacturer | Inchange Semiconductor Company |
| File Size | 207.33 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1105_InchangeSemiconductorCompany.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD1105 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;
| Part Number | Description |
|---|---|
| 2SD110 | Silicon NPN Power Transistor |
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| 2SD1603 | Silicon NPN Darlington Power Transistor |
| 2SD1770 | Silicon NPN Darlington Power Transistor |
| 2SD1832 | Silicon NPN Darlington Power Transistor |