2SD1113 Datasheet | Hitachi Semiconductor

2SD1113(K) Silicon NPN Triple Diffused Application Igniter Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 6 kΩ (Typ) 450 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg Ratings 300 300 7 6 10 40 150 - 55 to +150 Unit V V V A A W °C °C 2SD1113(K) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. Symbol V(BR)CBO VCEO(sus) V(BR)EBO I CEO h FE VCE(sat) VBE(sat) t on t off Min 300 300 7 - 500 - - - - Typ - - - - - - - 2.0 23 Max 500 - - 100 - 1.5 2.0 - - V V µs µs Unit V V V µA Test conditions I C = 0.1 m A, IE = 0 I C = 3 A, PW = 50 µs, f = 50 Hz, L = 10 m H I E = 50 m A, IC = 0 VCE = 300 V, RBE = ∞ VCE = 2 V, IC = 4 A- 1 I C = 4 A, IB = 40 m A- 1 I C = 4 A, IB = 40 m A- 1 I C = 4 A, IB1 = - IB2 = 40 m A I C = 4 A, IB1 = - IB2 = 40 m A Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 50 10 Area of Safe Operation i C (peak) IC (max) Collector current IC (A) ms =1 ms ion rat PW = 10 pe PW DC...