2SD1126K Datasheet | Hitachi Semiconductor

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.5 kΩ (Typ) 130 Ω (Typ) 3 2 3 2SD1126(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg ID Ratings 120 120 7 10 15 50 150 - 55 to +150 10 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 - - 1000 - - - - - - - Typ - - - - - - - - - - 0.8 8.0 Max - - 100 10 2000 1.5 3.0 2.0 3.5 3.0 - - V V V V V µs µs Unit V V µA µA Test conditions I C = 25 m A, RBE = ∞ I E = 200 m A, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 5 A- 1 I C = 5 A, IB = 10 m A- 1 I C = 10 A, IB = 0.1 A- 1 I C = 5 A, IB = 10 m A- 1 I C = 10 A, IB = 0.1 A- 1 I D = 10 A- 1 I C = 5 A, IB1 = - IB2 = 10 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. h FE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off 2SD1126(K) Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 30 10 IC (max) 3 i C (peak) Area of Safe Operation Collector current IC (A) = ot sh ot 1 sh s 1 n m s 1 tio m ra pe...