2SD1134 Datasheet | Hitachi Semiconductor

2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier plementary pair with 2SB857 and 2SB858 Outline TO-220AB 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg 2SD1133 70 50 5 4 8 40 150 - 45 to +150 2SD1134 70 60 5 4 8 40 150 - 45 to +150 Unit V V V A A W °C °C 2SD1133, 2SD1134 Electrical Characteristics (Ta = 25°C) 2SD1133 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 2SD1134 Max - - - 1 320 - 1 1 - Min 70 60 5 - 60 35 - - - Typ - - - - - - - - 7 Max - - - 1 320 - 1 1 - V V MHz Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 50 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 50 V, IE = 0 VCE = 4V I C = 1 A- 2 I C = 0.1 A- 2 I C = 2 A, IB = 0.2 A- 2 VCE = 4 V, IC = 1 A- 2 VCE = 4 V, IC = 0.5 A- 2 Min 70 50 5 - 60...