2SD1135 Datasheet | Hitachi Semiconductor

Silicon NPN Triple Diffused Application Low frequency power amplifier plementary pair with 2SB859 Outline TO-220AB 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg Ratings 100 80 5 4 8 40 150 - 45 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 80 5 - 1 Typ - - - - - - - 10 40 Max - - 0.1 200 - 1.5 2 - - Unit V V m A Test conditions I C = 50 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 80 V, IE = 0 VCE = 5 V, IC = 1 A- 2 VCE = 5 V, IC = 0.1 A- 2 VCE = 5 V, IC = 1 A- 2 I C = 2 A, IB = 0.2 A- 2 VCE = 5 V, IC = 0.5 A- 2 VCB = 20 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO h FE1- h FE2 Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance VBE VCE(sat) f T Cob 60 35 - - - - V V MHz p F Notes: 1. The 2SD1135 is grouped by h FE1 as follows. 2. Pulse test. B 60 to 120 C 100 to 200 Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W) 5 Area of Safe Operation (10 V, 4 A) IC max (Continuous) D (33 V, 1.2 A) 2 (T C O C = per 25 at 1.0 °C ion ) 0.5 Collector current IC...