2SD1137
2SD1137 is NPN TRANSISTOR manufactured by Hitachi Semiconductor.
Silicon NPN Triple Diffused
Application
Low frequency power amplifier TV vertical deflection output plementary pair with 2SB860
Outline
TO-220AB
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C (peak) PC PC
- Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
Rating 100 100 4 4 5 1.8 40 150
- 45 to +150
Unit V V V A A W W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 100 4
- - 50 25 Collector to emitter saturation voltage Note: 1. Pulse test. VCE (sat)
- Typ
- -
- -
- -
- Max
- - 100 50 250 350 1.0 V Unit V V µA µA Test conditions I C = 10 m A, RBE = ∞ I E = 1 m A, IC = 0 VCE = 80 V, RBE = ∞ VEB = 3.5 V, IC = 0 VCE = 4 V I C = 0.5 A- 1 I C = 50 m A I C = 1 A, IB = 0.1 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio V(BR)EBO I CEO I EBO h FE
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 10
Area of Safe Operation (10 V, 4 A) Collector current IC (A) 3 1.0 0.3 0.1 (100 V, 50 m A) 0.03 0.01 DC Operation TC = 25°C (40 V, 1 A)
50 100 Case temperature TC (°C)
3 10 30 100 300 1,000 Collector to emitter voltage VCE (V)
Typical Output Characteristecs 10 TC = 25°C
8 6
DC Current Transfer Ratio vs. Collector Current 1,000 VCE = 5 V DC current transfer ratio h FE 300 TC = 75°C 100 25°C
- 25°C 30
Collector current IC...
