2SD1368 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application - Low frequency power amplifier - plementary pair with 2SB1002 Outline UPAK 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak)- PC - Tj Tstg 2 1 Ratings 100 50 6 1 1.5 1 150 - 55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 100 50 6 - - Typ - - - - - - - - 100 20 Max - - - 0.1 0.1 500 0.3 1.2 - - Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 80 V, IE = 0 VEB = 4 V, IC = 0 VCE = 2 V, IC = 0.1 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Mark h FE CA 100 to 200 V(BR)EBO I CBO I EBO h FE- - - - - CC VCE(sat) VBE(sat) f T Cob V V MHz p F I C = 1 A, IB = 0.1 A, Pulse I C = 1 A, IB = 0.1 A, Pulse VCE = 2 V, IC = 10 m A, Pulse VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD1368 is grouped by h FE as follows. CB 160 to 200 250 to...