2SD1376 Datasheet | Hitachi Semiconductor

2SD1376(K) Silicon NPN Epitaxial Application Low frequency power amplifier plementary pair with 2SB1012(K) Outline TO-126 MOD 3 1. Emitter 2. Collector 3. Base ID 6 kΩ (Typ) 0.5 kΩ (Typ) 1 2SD1376(K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) PC - Tj Tstg ID- 1 1 Rating 120 120 7 1.5 3.0 20 150 - 55 to +150 1.5 Unit V V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 7 - - 2000 - - - - - - - Typ - - - - - - - - - - 0.5 2.0 Max - - 100 10 30000 1.5 2.0 2.0 2.5 3.0 - - V V V V V µs µs Unit V V µA µA Test conditions I C = 10 m A, RBE = ∞ I E = 50 m A, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I D = 1.5 A- 1 I C = 1 A, IB1 = - IB2 = 1 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. h FE VCE (sat)1 VCE (sat)2 VBE (sat)1 VBE (sat)2 VD Ton Toff 2SD1376(K) Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) 10 3 1.0 0.3 0.1 0.03 Ta = 25°C 1 shot pulse 0.01 0 50 100 Case temperature TC (°C) 150 3 10 30 100 Collector to emitter voltage VCE (V) 300 i C (peak) 10 0µ Area of Safe Operation 1µ...