2SD1376 Datasheet (PDF) Download
Inchange Semiconductor
2SD1376

Description

High DC Current Gain- : hFE = 2000(Min)@ IC= 1A Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) Low Collector-Emitter Saturation Voltage Complement to Type 2SB1012 Minimum Lot-to-Lot variations for robust device performance and reliable operation.