Datasheet Details
| Part number | 2SD1378 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.47 KB |
| Description | Power Transistor |
| Datasheet | 2SD1378_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1378 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 212.47 KB |
| Description | Power Transistor |
| Datasheet | 2SD1378_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 0.5A ·Complement to Type 2SB1007 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.7 A 1.2 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1378 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1378 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA;
| Part Number | Description |
|---|---|
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| 2SD1336 | Power Transistor |
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| 2SD1345 | Power Transistor |
| 2SD1351 | Silicon NPN Power Transistors |
| 2SD1390 | Power Transistor |
| 2SD103 | Silicon NPN Power Transistors |