Datasheet4U Logo Datasheet4U.com

2SD1336 - Power Transistor

Product Overview

📥 Download Datasheet

Datasheet preview – 2SD1336

Datasheet Details

Part number 2SD1336
Manufacturer Inchange Semiconductor
File Size 213.00 KB
Description Power Transistor
Datasheet download datasheet 2SD1336 Datasheet
Additional preview pages of the 2SD1336 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continu

Other Datasheets by Inchange Semiconductor
Published: |