| Part number | 2SD1336 |
|---|---|
| Datasheet | 2SD1336_InchangeSemiconductor.pdf |
| File Size | 213.00 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1336 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1338 | Silicon NPN Transistor |
| 2SD1314 | Silicon NPN Transistor |
| 2SD1340 | Silicon NPN Transistor |
| 2SD1342 | Silicon NPN Transistor |
| 2SD1345 | Power Transistor |
| 2SD1351 | Silicon NPN Power Transistors |
| 2SD1371 | Silicon NPN Transistor |
| 2SD1378 | Power Transistor |
| 2SD1390 | Power Transistor |
| 2SD103 | Silicon NPN Power Transistors |
