Datasheet4U Logo Datasheet4U.com

2SD1371 - Silicon NPN Transistor

General Description

High Voltage High Speed Switching High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

ballast applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1370 NPN Transistor INCHANGE
2SD1372 NPN Transistor INCHANGE
2SD1373 NPN Transistor INCHANGE
2SD1374 NPN Transistor INCHANGE
2SD1375 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1378 Power Transistor
2SD1314 Silicon NPN Transistor
2SD1336 Power Transistor
2SD1338 Silicon NPN Transistor
2SD1340 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching mode power supply and electronic ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.5 ℃/W 2SD1371 isc website：www.iscsemi.