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2SD1375 - NPN Transistor

Datasheet Summary

Description

High Collector-Base Voltage- : VCBO= 300V(Min.) Good Linearity of hFE High Speed Switching Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage,high-speed,power switc

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Datasheet Details

Part number 2SD1375
Manufacturer INCHANGE
File Size 189.72 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1375 DESCRIPTION ·High Collector-Base Voltage- : VCBO= 300V(Min.) ·Good Linearity of hFE ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage,high-speed,power switching regulators and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.0 A ICM Collector Current-Peak 6.0 A IB Base Current 1.
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