2SD1418 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application - Low frequency power amplifier - plementary pair with 2SB1025 Outline UPAK 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak)- PC - Tj Tstg 2 1 Ratings 120 80 5 1 2 1 150 - 55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 80 5 - 1 Typ - - - - - - - - 140 12 Max - - - 10 320 - 1 1.5 - - Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 150 m A- 2 VCE = 5 V, IC = 500 m A- 2 I C = 500 m A, IB = 50 m A- 2 VCE = 5 V, IC = 150 m A- 2 VCE = 5 V, IC = 150 m A- 2 VCB = 10 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO h FE1- h FE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance VCE(sat) VBE f T Cob 60 30 - - - - V V MHz p F Notes: 1. The 2SD1418 is grouped by h FE1 as follows. 2. Pulse test Mark h FE1 DA 60 to 120 DB 100 to 200 DC 160 to 320 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Collector Current IC (A) Typical Output Characteristics 1.0 35 30 25 20 15 10 5 0.4 2 1 0.5 m A IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 2 4 6 8 10 Collector to Emitter Voltage VCE...