2SD1420
2SD1420 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
UPAK
1 3 2
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak)- PC
- Tj Tstg
2 1
Ratings 180 120 5 1.5 3 1 150
- 55 to +150
Unit V V V A A W °C °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 180 120 5
- 1
Typ
- -
- -
- -
- -
Max
- -
- 10 320
- 1.0 0.9
Unit V V V µA
Test conditions I C = 1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 1 m A, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 0.15 A VCE = 5 V, IC = 0.5 A
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO h FE1- h FE2 Collector to emitter saturation voltage Base to emitter voltage Note: Mark h FE1 EA 60 to 120 VCE(sat) VBE EB 100 to 200
60 30
- - EC
I C = 0.5 A, IB = 50 m A, Pulse VCE = 5 V, IC = 0.15 A, Pulse
1. The 2SD1420 is grouped by h FE1 as follows. 160 to 320
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation Pc (W) (on the alumina ceramic board) Collector Current IC (A) Typical Output Characteristics 1.0
5. 0
4.0 5 3....
