2SD1490 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application - Low frequency power amplifier - plementary pair with 2SB1059 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 70 50 6 1 0.75 150 - 55 to +150 Unit V V V A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 70 50 6 - - Typ - - - - - - - 80 20 Max - - - 1 0.2 500 0.3 - - Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 0.1 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: B 100 to 200 C 160 to 320 D 250 to 500 V(BR)EBO I CBO I EBO h FE- - - - VCE(sat) f T Cob V MHz p F I C = 1 A, IB = 0.1 A VCE = 2 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD1490 is grouped by h FE as follows. See characteristic curves of 2SD789. Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) 50 100 Ambient Temperature Ta...