2SD1504 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency amplifier, Muting Outline SPAK 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ic (peak) PC Tj Tstg Ratings 30 15 5 0.5 1.0 300 150 - 55 to +150 Unit V V V A A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 15 5 - 1 Typ - - - - - 0.65 0.15 0.018 300 0.5 Max - - - 10 1200 - 0.5 - - - Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 1 V, IC = 150 m A- 2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage V(BR)EBO I CBO h FE- VBE VCE(sat) VCE(sat) Gain bandwidth product On resistance f T ron - - - - - V V V MHz Ω VCE = 1 V, IC = 150 m A I C = 500 m A, IB = 50 m A- 2 I C = 30 m A, IB = 3 m A VCE = 1 V, IC = 50 m A I B = 2 m A Notes: 1. The 2SD1504 is grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800 F 600 to 1200 Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 300 Collector Current IC (m A) Typical Output Characteristics 10 12.5 10.0 7.5...