2SD1521 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 3 1. Emitter 2. Collector 3. Base ID 2 kΩ (Typ) 0.5 kΩ (Typ) 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C. Symbol VCEO VEBO IC I C (peak) PC Tj Tstg ID- Rating 50 7 1.5 3.0 10 150 - 55 to +150 1.5 Unit V V A A W °C °C A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage (Zener breakdown voltage) Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. Symbol V(BR)CBO [V Z] V(BR)EBO I CEO h FE VCE (sat)1 VCE (sat)2 VBE (sat)1 VBE (sat)2 VD Ton Toff Min 50 Typ 60 Max 70 Unit V Test conditions I C = 0.1 m A, IE = 0 - 2000 - - - - - - - - - - - - - - - 0.5 2.0 - 10 30000 1.5 2.0 2.0 2.5 3.0 - - V µA I E = 50 m A, IC = 0 VCE = 50 V, RBE = ∞ VCE = 3 V, IC = 1 A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I C = 1 A, IB = 1 m A- 1 I C = 1.5 A, IB = 1.5 m A- 1 I D = 1.5 A I C = 1 A, IB1 = - IB2 = 1 m A V V V V V µs µs Maximum Collector Dissipation Curve 15 Collector power dissipation Pc (W) 10 i C (peak) Collector current IC (A) 3 1.0 0.3 0.1 0.03 0.01 3 IC (max) 10 Area of Safe Operation 1 µs 100 µs PW s ms ) m °C 1 10 25 = = (T C Ta = 25°C 1 shot pulse 10 30 100 300 Collector to emitter voltage VCE...