2SD1559 Datasheet | Hitachi Semiconductor

Silicon NPN Triple Diffused Application Low frequency power amplifier plementary pair with 2SB1079 Outline TO-3P 1 1. Base 2. Collector (Flange) 3. Emitter 3 kΩ (Typ) 400 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC - Tj Tstg Ratings 100 100 7 20 30 3 100 150 - 55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 100 100 100 7 - - 1000 - - - - - - - Typ - - - - - - - - - - - 1.0 9.0 3.0 Max - - - - 100 1.0 20000 2.0 2.5 3.0 3.5 - - - V V V V µs µs µs I C = 10 A, IB1 = - IB2 = 20 m A I C = 20 A, IB = 200 m A- 1 Unit V V V V µA m A Test conditions I C = 0.1 m A, IE = 0 I C = 25 m A, RBE = ∞ I C = 200 m A, RBE = ∞- 1 VEB = 50 m A, IC = 0 VCB = 100 V, IE = 0 VCE = 80 V, RBE = ∞ VCE = 3 V, IC = 10 A- 1 I C = 10 A, IB = 20 m A- 1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturatiopn voltage Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test. h FE VCE(sat)1 VBE(sat)1 VCE(sat)2 VBE(sat)2 t on t stg tf Maximum Collector Dissipation Curve 120 Collector power dissipation Pc (W) 30 Collector current IC (A) 10 i C (peak) IC (max) Area of Safe Operation 10 µs 100 µs VCE = 3 V Pulse 1.0 3 10 Collector current IC (A) 30 PW =1 PW 80...