2SD1609 Datasheet | Hitachi Semiconductor

2SD1609, 2SD1610 .. Silicon NPN Epitaxial Application Low frequency high voltage amplifier plementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD1609 160 160 5 100 1.25 150 - 45 to +150 2SD1610 200 200 5 100 1.25 150 - 45 to +150 Unit V V V m A W °C °C 2SD1609, 2SD1610 .. Electrical Characteristics (Ta = 25°C) 2SD1609 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 2SD1610 Max - - - 10 - 320 - 1.5 2 - - Min 200 200 5 - - 60 30 - - - - Typ - - - - - - - - - 140 3.8 Max - - - - 10 320 - 1.5 2 - - V V MHz p F Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 m A VCE = 5 V, IC = 1 m A VCE = 5 V, IC = 10 m A I C = 30 m A, IB = 3 m A VCE = 5 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1 MHz Min 160 160 5 - -...