2SD1922 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-92MOD 3 ID 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ic (peak) ID PC Tj Tstg Ratings 25 25 6 0.8 1.5 0.8 0.9 150 - 55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 25 6 - - - 250 - - Typ - - - - - - - - - - Max - 35 35 - 0.2 0.5 0.2 1200 0.3 1.1 V V Unit V V V V µA µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I C = 0.8 A, RBE = ∞, L = 20 m H I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A- 1 I C = 0.8 A, IB = 80 m A- 1 I D = 0.8 A- 1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage E to C diode forward voltage Note: 1. Pulse test I EBO h FE VCE(sat) VD Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Area of Safe Operation 10 3 1.0 0.3 0.1 0.03 Ta = 25°C 1 Shot Pulse i C(peak) IC(max) 1 m s Collector Current IC (A) 0.8 s m n 10 = tio ra pe O 50 100 150 Ambient Temperature Ta (°C) 0.01 0.1 0.3 1.0 3 10 30 100 Collector to Emitter Voltage VCE (V) Area of Safe Operation of Emitter to Collector Diode 10 1.0 Ta = 25°C 1 Shot Pulse Collector Current IC (A) 0.8 Typical Output Characteristics 1.8 1.6 1.4 1.2 8 Diode Current ID...